A model for the electrical characteristics of metal-ferroelectric-insulator-semiconductor field-effect transistor

详细信息	查看全文 | 推荐本文 |

• 作者：Jing Sun^a ; Xue Jun Zheng^a ; ^b ; ^{zhengxuejun@xtu.edu.cn} ; Wen Li^a
• 关键词：Metal-ferroelectric-insulator-semiconductor field-effect transistor ; Modeling ; Capacitance&ndash ; voltage characteristics ; Current&ndash ; voltage characteristics
• 刊名：Current Applied Physics
• 出版年：2012
• 期刊代码：15_15671739
• 类别：ph
• 出版时间：May, 2012
• 卷：12
• 期：3
• 页码：760-764
• 文件大小：576 K

摘要

An improved theoretical model on the electrical characteristics of metal-ferroelectric-insulator-semiconductor field-effect transistor (MFIS-FET) has been proposed by considering the history-dependent electric field effect and the mobility model. The capacitance-voltage (C-V) characteristics of MFIS structure is evaluated by combining the switching physics of ferroelectric with the silicon physics, and the drain current-gate voltage (I_D-V_GS) and drain current-drain voltage (I_D-V_DS) characteristics of MFIS-FET are modeled by combining the switching physics of ferroelectric with Pao and Sah鈥檚 double integral. For two MFIS-FETs with SrBi₂Ta₂O₉ and (Bi,La)₄Ti₃O₁₂ ferroelectric layers, the C-V, I_D-V_GS and I_D-V_DS characteristics are simulated by using the improved model, and the results are more consistent with the previous experiment than those based on Lue model, indicating that the improved model is suitable for simulating the electrical characteristics of MFIS-FET. This work is expected to provide some guidance to the design and performance improvement of MFIS structure devices.