Ohmic contacts on p-GaN (Part I): investigation of different contact metals and their thermal treatment

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• 作者：Wenzel ; Roland ; Fischer ; Gerhard G. ; Schmid-Fetzer ; Rainer
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2001
• 期刊代码：65_13698001
• 类别：ms
• 出版时间：August, 2001
• 卷：4
• 期：4
• 页码：357-365
• 文件大小：529 K

摘要

The changes in contact resistivity and I–V curve linearity after annealing of Pd, Ni/Au, Cr/Au, Co/Au, Pt and Au contacts on p-GaN after tempering below and above 500°C have been investigated. CTLM-layered structures on p-GaN were thermally stressed and electrically analyzed. The I–V curve linearity as a measure of ohmic behavior has been derived from the correlation coefficient of the I–V curves. Below 500°C the Pd, Ni/Au, Cr/Au and Co/Au contacts become ohmic after annealing. The best final values of the specific contact resistance ρ_c after annealing increase in the sequence Ni/Au, Pd, Co/Au, Cr/Au, Au and Pt. After annealing above 500°C the contact resistance increases for all contact materials and the linearity decreases. A competition between the formation of reaction phases at the interface and the decomposition of the p-GaN epi-layer is a probable reason for this behavior.