摘要
Tungsten layers of 1-6 mg/cm2 with diameters of 10 mm are needed as heavy-ion targets and as flat or domed windows for in-beam ion sources. They are prepared by a high-vacuum evaporation-deposition process carried out in a computer-controlled apparatus. The tungsten, placed in the water-cooled crucible of an electron-beam gun, is gradually heated and evaporates at about its melting point (Tm = 3643 K). The tungsten is deposited onto 9 mg/cm2 copper backings which are preheated by the thermal radiation from the evaporant. The deposition rate is controlled by a quartz crystal monitor. After the high-vacuum deposition process, the copper backings are removed by selective etching and the self-supported tungsten foils are characterized by their areal mass. The features of the commercially available evaporation unit used are discussed by way of this deposition process.