Fermi-level pinning in Schottky diodes on IV–IV semiconductors: effect of Ge and C incorporation

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• 作者：Mamor ; M. ; Perrossier ; J.-L. ; Aubry-Fortuna ; V. ; Meyer ; F. ; Bouchier ; D. ; Bodnar ; S. ; Regolini ; J.L.
• 关键词：Fermi level ; Schottky diodes ; Semiconductors ; Germanium ; Carbon
• 刊名：Thin Solid Films
• 出版年：1997
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：February 15, 1997
• 卷：294
• 期：1-2
• 页码：141-144
• 文件大小：313 K

摘要

We have investigated the phenomenon of Fermi level (E_F) pinning at the interface between tungsten and SiGeC alloys with 0≤x≤33%and 0≤y≤1.25%. In an attempt to throw lights on the mechanisms responsible for the Fermi level pinning, we have measured Schottky barrier dependence on composition, strain retained in the semiconductor and temperature. For pure Si, the Fermi level is pinned relative to the valence band—Φ_Bn follows the bandgap variations with the temperature. On the other hand, the addition of Ge results in a Fermi level pinning relative to the conduction band—Φ_Bn remains constant whatever the composition, the strain in the films and the temperature. The role of C is still puzzling. The addition of C does not modify the barrier in n-SiGe films but leads to a large decrease of the barrier height on n-SiC.