UHV-CVD heteroepitaxial growth of Si_1−xGe_x alloys on Si(100) using silane and germane

详细信息	查看全文 | 推荐本文 |

• 作者：Vinh ; Le Thanh ; Aubry-Fortuna ; V. ; Zheng ; Y. ; Bouchier ; D. ; Guedj ; C. ; Hincelin ; G.
• 关键词：chemical vapour deposition ; epitaxy ; silane ; germanium
• 刊名：Thin Solid Films
• 出版年：1997
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：February 15, 1997
• 卷：294
• 期：1-2
• 页码：59-63
• 文件大小：413 K

摘要

In this paper, we investigate the growth rate and strain relaxation of Si_1−xGe_x layers grown on Si substrates by UHV-CVD. The Si_1−xGe_x growth rate is found to exhibit two different behaviors as a function of growth temperature. Above the temperature corresponding to hydrogen desorption (T_H), the SiGe growth rate first decreases with x, and finally becomes almost independent of x at higher values of x. Below T_H, the SiGe growth rate first increases with x, then shows a maximum and finally becomes almost independent of x at higher values of x. Using in-situ reflection high-energy electron diffraction (RHEED), transmission electron microscopy and photoluminescence, we have clearly identified two distinct mechanisms for strain relaxation as a function of Ge content: at x