Epitaxial growth of (1 0 0) Fe₃Si thin films on insulating substrates

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• 作者：Kensuke Akiyama ; Teiko Kadowaki ; Satoru Kaneko ; Azusa Kyoduka ; Yutaka Sawada ; Hiroshi Funakubo
• 关键词：A3. Physical vapor deposition processes ; B1. Metals ; B2. Magnetic materials
• 刊名：Journal of Crystal Growth
• 出版年：2008
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：April 2008
• 卷：310
• 期：7-9
• 页码：1703-1707
• 文件大小：469 K

摘要

(1 0 0)–Oriented Fe₃Si films were epitaxially grown on the (1 0 0) MgO and (1 0 0) MgAl₂O₄ substrates by using rf sputtering. The lattice–mismatch relationship between Fe₃Si and oxide single crystal affected the crystal growth of the (1 0 0)-oriented Fe₃Si film. The lattice parameters of the epitaxial film on the (1 0 0) MgO substrates were almost the same as those of the bulk sample and the lattice-matching strain in the films was released, while the lattice-matching strain remained in the epitaxial films on the (1 0 0) MgAl₂O₄ substrates.