Electron effective mobility in strained-Si/Si_1−xGe_x MOS devices using Monte Carlo simulation

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• 作者：V. Aubry-Fortuna ; P. Dollfus and S. Galdin-Retailleau
• 关键词：Strained-Si ; Effective mobility ; Monte Carlo simulation ; MOSFET
• 刊名：Solid-State Electronics
• 出版年：2005
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：2005
• 卷：49
• 期：8
• 页码：1320-1329
• 文件大小：512 K

摘要

Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained-Si/Si_1−xGe_x MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves μ_eff as a function of the effective vertical field E_eff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120%for strained-Si/Si_0.70Ge_0.30, in accordance with best experimental data. The effect of the strained-Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only. The role of the different scattering mechanisms involved in the strained-Si/Si_1−xGe_x MOS structures is explained. In addition, comparison with experimental results is discussed in terms of SiO₂/Si interface roughness, as well as surface roughness of the SiGe substrate on which strained-Si is grown.