Nanowire of hexagonal gallium oxynitride: Direct observation of its stacking disorder and its long nanowire growth

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• 作者：Yuji Masubuchi^a ; ^{yuji-mas@eng.hokudai.ac.jp} ; Ryohei Yamaoka^a ; Tetsuya Tohei^b ; Teruyasu Mizoguchi^c ; Yuichi Ikuhara^b ; Shinichi Kikkawa^a
• 关键词：Fibres ; Electron microscopy ; Oxynitrides ; Defects
• 刊名：Journal of the European Ceramic Society
• 出版年：2012
• 期刊代码：53_09552219
• 类别：ms
• 出版时间：July, 2012
• 卷：32
• 期：9
• 页码：1989-1993
• 文件大小：1000 K

摘要

The crystal structure of gallium oxynitride nanowire was investigated by using scanning transmission electron microscopy. Gallium oxynitride nanowire was directly observed to have a biphasic wurtzite and zinc-blende structure. There was a stacking disorder of several atomic layers between the two phases. The new biphasic nanowire formed due to the presence of Ni in starting material because its nitride has a zinc-blende structure whereas gallium oxynitride has the wurtzite structure. Crystal growth of gallium oxynitride nanowires was studied using seed crystals. Seed crystals and amorphous gallium oxide precursors were annealed under different ammonia flow rates to grow gallium oxynitride nanowires. The nanowires grew to length of 150 渭m but they did not grow laterally when the ammonia flow rate was 50 mL/min.