Synthesis of molybdenum silicide by both ion implantation and ion beam assisted deposition

详细信息	查看全文 | 推荐本文 |

• 作者：Qingli Meng ; Jizhong Zhang ; Zhanping Li ; Gaobao Li ; Runbing Chen
• 关键词：Molybdenum silicide ; MEVVA ; IBAD ; Nanohardness
• 刊名：Applied Surface Science
• 出版年：2008
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：28 February 2008
• 卷：254
• 期：9
• 页码：2678-2684
• 文件大小：1233 K

摘要

Two groups of Mo/Si films were deposited on surface of Si(1 0 0) crystal. The first group of the samples was prepared by both ion beam assisted deposition (IBAD) and metal vapor vacuum arc (MEVVA) ion implantation technologies under temperatures from 200 to 400 °C. The deposited species of IBAD were Mo and Si, and different sputtering Ar ion densities were selected. The mixed Mo/Si films were implanted by Mo ion with energy of 94 keV, and fluence of Mo ion was 5 × 10¹⁶ ions/cm². The second group of the samples was prepared only by IBAD under the same test temperature range. The Mo/Si samples were analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), sheet resistance, nanohardness, and modulus of the Mo/Si films were also measured. For the Mo/Si films implanted with Mo ion, XRD results indicate that phase of the Mo/Si films prepared at 400 and 300 °C was pure MoSi₂. Sheet resistance of the Mo/Si films implanted with Mo ion was less than that of the Mo/Si films prepared without ion implantation. Nanohardness and modulus of the Mo/Si films were obviously affected by test parameters.