Synthesis of silicon carbide films by combined implantation with sputtering techniques

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• 作者：Gaobao Li ; Jizhong Zhang ; Qingli Meng ; Wenzhi Li
• 关键词：Silicon carbide ; MEVVA ; IBAD ; Ion implantation
• 刊名：Applied Surface Science
• 出版年：2007
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：15 August 2007
• 卷：253
• 期：20
• 页码：8428-8434
• 文件大小：939 K

摘要

Silicon carbide (SiC) films were synthesized by combined metal vapor vacuum arc (MEVVA) ion implantation with ion beam assisted deposition (IBAD) techniques. Carbon ions with 40 keV energy were implanted into Si(1 0 0) substrates at ion fluence of 5 × 10¹⁶ ions/cm². Then silicon and carbon atoms were co-sputtered on the Si(1 0 0) substrate surface, at the same time the samples underwent assistant Ar-ion irradiation at 20 keV energy. A group of samples with substrate temperatures ranging from 400 to 600 °C were used to analyze the effect of temperature on formation of the SiC film. Influence of the assistant Ar-ion irradiation was also investigated. The structure, morphology and mechanical properties of the deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindentation, respectively. The bond configurations were obtained from IR absorption and Raman spectroscopy. The experimental results indicate that microcrystalline SiC films were synthesized at 600 °C. The substrate temperature and assistant Ar-ion irradiation played a key role in the process. The assistant Ar-ion irradiation also helps increasing the nanohardness and bulk modulus of the SiC films. The best values of nanohardness and bulk modulus were 24.1 and 282.6 GPa, respectively.