Analytical modeling for 3D potential distribution of rectangular gate (RecG) gate-all-around (GAA) MOSFET in subthreshold and strong inversion regions

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• 作者：Dheeraj Sharma ^{dheerajs@iiti.ac.in} ; Santosh Kumar Vishvakarma ; ^{skvishvakarma@iiti.ac.in} ; ^{svishvakarma@gmail.com}
• 关键词：Rectangular gate (RecG) ; Gate-all-around (GAA) MOSFET ; Potential ; Characteristic length ; Subthreshold and strong inversion regions
• 刊名：Microelectronics Journal
• 出版年：2012
• 期刊代码：72_00262692
• 类别：ms
• 出版时间：June, 2012
• 卷：43
• 期：6
• 页码：358-363
• 文件大小：594 K

摘要

In this paper, we have introduced an analytical subthreshold and strong inversion 3D potential model for rectangular gate (RecG) gate-all-around (GAA) MOSFET. The subthreshold and strong inversion potential distribution in channel region of a RecG MOSFET is obtained respectively by solving 3D Laplace and 3D Poisson equations. The assumed parabolic potential distribution along the z-axis in channel direction is appropriately matched with 3D device simulator after consideration of z-depended characteristic length in subthreshold region. For accurate estimation of short channel effects (SCE), the electrostatics near source and drain is corrected. The precise gate-to-gate potential distribution is obtained after consideration of higher order term in assumed parabolic potential profile. The model compares well with numerical data obtained from the 3D ATLAS as a device simulator and deckbuild as an interactive runtime of Silvaco Inc.