A novel protein kinase signaling pathway essential for blood pressure regulation in humans

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• 作者：Kristopher T. Kahle ; Jesse Rinehart ; Gerhard Giebisch ; Gerardo Gamba ; Steven C. Hebert ; Richard P. Lifton
• 关键词：A3. Molecular beam epitaxy ; B2. Semiconducting quarternary alloys
• 刊名：Trends in Endocrinology and Metabolism
• 出版年：2008
• 期刊代码：149_10432760
• 类别：bio
• 出版时间：April 2008
• 卷：19
• 期：3
• 页码：91-95
• 文件大小：130 K

摘要

We report the incorporation behaviors of As, Sb, and N atoms in GaAsSbN grown by gas-source molecular-beam epitaxy. We found that N atom is more reactive and competitive than Sb atom at the growth temperature ranging from 420 to 450 °C. The increment in Sb beam flux hardly changes the N composition. However, the increment in N flux retards the incorporation of Sb. In addition, the increment in As₂ flux makes the Sb and N compositions decrease at the same rate. Based on these results, we have successfully grown GaAsSbN epilayers lattice-matched to GaAs substrates. The energy gap at room temperature is as low as 0.803 eV. Negative deviation from Vegard's law in lattice constant is observed in these layers.