Development of robust interfaces based on crystalline γ-Al₂O₃(001) for subsequent deposition of amorphous high-κ oxides

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• 作者：C. Merckling ; M. El-Kazzi ; L. Becerra ; L. Largeau ; G. Patriarche ; G. Saint-Girons ; G. Hollinger
• 关键词：Molecular beam epitaxy ; Interfacial γ ; -Al₂O₃ ; Amorphous High-κ ; dielectrics ; LaAlO₃
• 刊名：Microelectronic Engineering
• 出版年：2007
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：September-October 2007
• 卷：84
• 期：9-10
• 页码：2243-2246
• 文件大小：793 K

摘要

This work reports on the development of thin crystalline γ-Al₂O₃(001) interfacial layers for subsequent deposition of amorphous high-κ oxides on Si(001). High quality and single crystal of γ-Al₂O₃ have been grown by Molecular Beam Epitaxy (MBE) on silicon. This γ-Al₂O₃/Si system leads to the formation of sharp and robust interfaces. They could be used for subsequent growth of amorphous high-κ oxides like lanthanum aluminate (LaAlO₃) without forming interfacial reactions. Despite high temperatures and oxygen pressure conditions during deposition or post-annealing processes, the heterostructures are stable with respect to the silicon substrate up to 850°C.