Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under C

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• 作者：Chriqui ; Y. ; Largeau ; L. ; Patriarche ; G. ; Saint-Girons ; G. ; Bouchoule ; S. ; Sagnes ; I. ; Bensahel ; D. ; et. al.
• 关键词：81.05.Ea ; 81.15.Gh ; 85.60.Jb ; A1. Antiphase boundary ; A1. Growth mechanism ; A3. Atomic layer epitaxy ; A3. Metalorganic vapor phase epitaxy
• 刊名：Journal of Crystal Growth
• 出版年：2004
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：April 15, 2004
• 卷：265
• 期：1-2
• 页码：53-59
• 文件大小：347 K

摘要

The effects of atomic layer epitaxy (ALE) on the surface morphology, the antiphase boundaries (APBs) and the dislocation density of GaAs grown on exactly (001)-oriented Ge/Si virtual substrates (VS) have been investigated. ALE combined with the insertion of a low temperature (<500°C) GaAs buffer layer led to a drastic reduction of the APBs and of the dislocation density (<5×10⁵cm⁻²), and to a reduction of the surface roughness, thus leading to an important improvement of the photoluminescence yield of InGaAs quantum well (QW) based structures. Light emitting diodes (LEDs) containing InGaAs/GaAs QWs have been realised on exactly (001)-oriented Ge/Si VS. We observed room-temperature continuous wave operation from these LEDs.