Highly oriented polycrystalline 伪-HgI₂ films grown through combined vertical deposition and HWPVD methods

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• 作者：Lei Ma^a ; Weiguang Yang^a ; ^{wgyangd@gmail.com} ; Yali Wang^b ; Gonglong Liu^a ; Liangliang Chen^a ; Ke Tang^a ; Linjun Wang^a ; Weimin Shi^a ; ^{wmshi@mail.shu.edu.cn}
• 关键词：Polycrystalline ; HgI2 ; Seed layers ; UV&ndash ; vis spectra
• 刊名：Nuclear Instruments and Methods in Physics Research Section A ; Accelerators ; Spectrometers ; Detectors and Associated Equipment
• 出版年：2012
• 期刊代码：41_01689002
• 类别：ph
• 出版时间：1 June, 2012
• 卷：676
• 期：Complete
• 页码：1-4
• 文件大小：556 K

摘要

Different 伪-HgI₂ seed layers were prepared by vertical deposition method through varying reactive solution concentrations. Polycrystalline 伪-HgI₂ films were grown on the 伪-HgI₂ seed layer by the hot wall vapor phase deposition (HWPVD) method. The orientation along the (001) direction and compactness of the polycrystalline 伪-HgI₂ films are significantly enhanced as compared to that without a seed layer. The polycrystalline 伪-HgI₂ films grown on a three-deposit seed layer show improved electrical properties.