Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth

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• 作者：Takahiro Kawamura^a ; ^{tkawamura@mach.mie-u.ac.jp} ; Yoshihiro Kangawa^b ; Koichi Kakimoto^b ; Yasuyuki Suzuki^a
• 关键词：A1. Computer simulation ; A1. Diffusion ; A1. Molecular dynamics ; A2. Growth from solutions ; B1. GaN
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：15 July, 2012
• 卷：351
• 期：1
• 页码：32-36
• 文件大小：883 K

摘要

In this study, we simulated the solution growth of gallium nitride (GaN) and investigated the diffusion behavior of nitrogen (N) atoms on growth surfaces by molecular dynamics simulation. The simulation showed that the Ga-face grew flatter than the N-face. Comparing the diffusion coefficients of a N atom on Ga- and N-faces, the values on the Ga-face were about 3.5 times larger than those on the N-face.