Vapor-phase epitaxial growth of GaN films using Ga₂O vapor and NH₃

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• 作者：Mamoru Imade^a ; ^{imade@cryst.eei.eng.osaka-u.ac.jp} ; Yuan Bu^a ; Tomoaki Sumi^a ; Akira Kitamoto^a ; Masashi Yoshimura^a ; Takatomo Sasaki^a ; Masashi Imsemura^b ; Yusuke Mori^a
• 关键词：A2. Growth from vapor ; A2. Single crystal growth ; A3. Vapor Phase Epitaxy ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：1 July, 2012
• 卷：350
• 期：1
• 页码：56-59
• 文件大小：381 K

摘要

High-temperature epitaxial growth (>1200 掳C) of GaN using Ga₂O vapor and NH₃ was performed to increase the crystal growth rate and improve crystal qualities such as surface morphology, crystallinity and oxygen incorporation. Results showed that the growth rate linearly increased with the increasing partial pressure of Ga₂O, , while the surface morphology and crystallinity degraded, and oxygen concentration in the epilayers increased. When the growth temperature increased, smooth GaN epilayers without the degradation of crystallinity could be grown even at high , i.e. a high growth rate. In addition, the oxygen concentration decreased as the growth temperature was increased.