Annealing effects on properties of LaB₆/ATO thin films deposited by magnetron sputtering

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• 作者：Wei Wang ; Yifei Yuan ; Lin Zhang ; Guanghui Min ; ^{ghmin@sdu.edu.cn}
• 关键词：A. Films ; C. Optical properties ; Magnetron sputtering
• 刊名：Ceramics International
• 出版年：2012
• 期刊代码：13_02728842
• 类别：ms
• 出版时间：July, 2012
• 卷：38
• 期：5
• 页码：4313-4318
• 文件大小：994 K

摘要

A series of LaB₆/ATO films were deposited by magnetron sputtering at room temperature with the same deposition parameters. After deposition, the films were annealed at 400 掳C, 700 掳C and 1000 掳C, respectively. The structure, morphology and opto-electrical characteristics of films were studied. It was found that the temperature for primary nucleation of LaB₆ films was about 700 掳C. The crystallinity and transmissivity increased with increasing annealing temperature. After annealing at 1000 掳C, the films exhibited a much higher transmissivity in the visible region than in the near-infrared area. However, the resistivity increased by one order of magnitude after heat treatment and the films without annealing presented the best electrical property.