Method to deduce the critical size for interfacial delamination of patterned electrode structures and application to lithiation of thin-film silicon islands

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• 作者：Hamed Haftbaradaran^a ; Xingcheng Xiao^b ; Mark W. Verbrugge^b ; Huajian Gao^a ; ^{Huajian_Gao@brown.edu}
• 关键词：Delamination ; Interface ; Patterned thin films ; Silicon negative electrodes
• 刊名：Journal of Power Sources
• 出版年：2012
• 期刊代码：58_03787753
• 类别：ce
• 出版时间：15 May, 2012
• 卷：206
• 期：Complete
• 页码：357-366
• 文件大小：1442 K

摘要

Recent experiments have suggested that there is a critical size for patterned silicon (Si) thin film electrodes for delamination from a current collector during lithiation and delithiation cycling. However, no existing theories can explain this phenomenon, in spite of its potential importance in designing reliable electrodes for high-capacity lithium-ion batteries. In this study, we show that the observed delamination size effect can be rationalized by modeling thin film delamination in the presence of large scale interfacial sliding. A method is proposed to deduce the critical size for delamination based on the critical conditions for the nucleation and growth of edge or center cracks at the film-substrate interface under plane strain or axisymmetric conditions. Applications to lithiation of thin-film Si islands give results in excellent agreement with experimental observations.