Influence of Ag thickness on electrical, optical and structural properties of nanocrystalline MoO₃/Ag/ITO multilayer for optoelectronic applications

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• 作者：Mohsen Ghasemi Varnamkhasti^a ; ^{m_gh_v@yahoo.com} ; ^{m.ghasemi@sci.ui.ac.ir} ; Hamid Reza Fallah^a ; ^b ; ^{hfallah@sci.ui.ac.ir} ; Mojtaba Mostajaboddavati^a ; ^{mmostajab@yahoo.com} ; Ali Hassanzadeh^c ; ^{ali.hassanzadeh@gmail.com}
• 关键词：MoO3/Ag/ITO/glass multilayer films ; X-ray diffraction ; Transparent conductive anode ; Optical properties
• 刊名：Vacuum
• 出版年：2012
• 期刊代码：83_0042207x
• 类别：ph
• 出版时间：14 March, 2012
• 卷：86
• 期：9
• 页码：1318-1322
• 文件大小：826 K

摘要

In this study, MoO₃/Ag/ITO/glass (MAI) nano-multilayer films were deposited by the thermal evaporation technique and then were annealed in air atmosphere at 200聽掳C for 1聽h. The effects of Ag layer thickness on electrical, optical and structural properties of the MoO₃(45聽nm)/Ag(5-20聽nm)/ITO(45聽nm)/glass nano-multilayer films were investigated. The sheet resistance decreased rapidly with increasing Ag thickness. Above a thickness of 10聽nm, the sheet resistances became somewhat saturated to a value of 3(惟/鈻?. The highest transparency over the visible wavelength region of spectrum (85%) was obtained for 10聽nm Ag layer thickness. Carrier mobility, carrier concentrations, transmittance and reflectance of the layers were measured. The allowed direct band-gap for an Ag thickness range 5-20聽nm was estimated to be in the range 3.58-3.71聽eV. The XRD pattern showed that the films were polycrystalline. X-ray diffraction has shown that Ag layer has a (111) predominant orientation when deposited. The figure of merit was calculated for MAI multilayer films. It has been found that the Ag layer thickness is a very important factor in controlling the electrical and optical properties of MAI multilayer films. The optimum thickness of the Ag layer for these films was determined. The results exhibit that the MAI transparent electrode is a good structure for use as the anode of optoelectronic devices.