Diffusion processes in NiTi/Si, NiTi/SiO₂ and NiTi/Si₃N₄ systems under annealing

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• 作者：Jarrige ; I. ; Holliger ; P. ; Jonnard ; P.
• 关键词：Diffusion ; Interfaces ; Secondary ion mass spectrometry (SIMS) ; X-Ray emission
• 刊名：Thin Solid Films
• 出版年：2004
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：June 30, 2004
• 卷：458
• 期：1-2
• 页码：314-321
• 文件大小：812 K

摘要

We present a nanometric scale analysis of the NiTi/Si, NiTi/SiO₂ and NiTi/Si₃N₄ systems before and after annealing at 500 °C during 30 min, by secondary ion mass spectrometry and electron-induced X-ray emission spectroscopy. Before annealing, a few nanometers thick transition layer forms at the interface of each system. Under annealing, a NiSi₂ layer forms in the NiTi/Si system over several tens of nanometers, whereas a TiO_x diffusion barrier builds up at the NiTi/SiO₂ interface. A few nanometers thick mix layer composed of TiSi₂, TiN and NiSi₂ forms at the NiTi/Si₃N₄ interface. This interface presents an intermediate reactivity under annealing between that of NiTi/Si and NiTi/SiO₂.