Epitaxial growth of orthorhombic SnO₂ films on various YSZ substrates by plasma enhanced atomic layer deposition

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• 作者：Sungtae Kim ; Dai-Hong Kim ; Seong-Hyeon Hong ; ^{shhong@snu.ac.kr}
• 关键词：A1. Crystal structure ; A3. Atomic layer deposition ; B1. Tin oxide ; B1. Yttria-stabilized zirconia
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：1 June, 2012
• 卷：348
• 期：1
• 页码：15-19
• 文件大小：1106 K

摘要

SnO₂ thin films were deposited on (100), (110), and (111) yttria-stabilized zirconia (YSZ) substrates using plasma enhanced atomic layer deposition (PEALD), and their structural, electrical, and optical properties were investigated. X-ray diffraction, X-ray pole figure, and high resolution TEM analyses revealed that orthorhombic (100) and (110) SnO₂ films were hetero-epitaxially grown on (100) and (110) YSZ, respectively. The determined in-plane orientation relationships were and ((100)YSZ) and and ((110)YSZ). However, polycrystalline rutile SnO₂ films were deposited on the (111) YSZ substrate. All the SnO₂ films exhibited a similar electrical resistivity of 鈭?脳10^鈭? 惟 cm and the average transmittance of 78%in the visible range and thus the electrical and optical properties were not noticeably changed with film orientation and phase.