Nd:GdVO₄ thin films grown on La₃Ga₅SiO₁₄ (LGS) and sapphire substrates by pulsed laser deposition properties

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• 作者：Hongxia Li ; Jiyang Wang ; Huaijin Zhang ; Guangwei Yu ; Xiaoxia Wang ; Liang Fang ; Mingrong Shen ; Zhaoyuan Ning ; Jing Yang ; Shiling Li et al.
• 关键词：A1. Atomic force microscopy ; A3. Pulsed laser deposition ; B1. Optical waveguide
• 刊名：Journal of Crystal Growth
• 出版年：2005
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：2005
• 卷：281
• 期：2-4
• 页码：426-431
• 文件大小：364 K

摘要

Nd-doped gadolinium vanadate (Nd:GdVO₄) films have been grown on La₃Ga₅SiO₁₄ (LGS) and sapphire substrates by pulsed laser deposition for the purpose of fabricating diode-pumped waveguide lasers. Films were grown over a range of temperatures from 600 to 700 °C in the presence of an oxygen pressure between 2 and 20 Pa. Films were characterized by X-ray diffraction, atomic force microscopy, and prism coupling method. Nd:GdVO₄ films on different substrates show preferential growth along (2 0 0) with smooth surface. However, films fabricated on sapphire substrates have better crystallization quality compared with that on La₃Ga₅SiO₁₄ (LGS) substrates according to the X-ray analysis. Films with sharper dips were observed on sapphire substrates in comparison with that on LGS substrates, which means a good confinement of the light in the corresponding mode.