摘要
This study demonstrates an ambient air operated organic complementary inverter composed of a pentacene p-channel and a N,N鈥?ditridecylperylene-3,4,9,10-tetracarboxylic diimide n-channel organic thin-film transistor (TFT) fabricating at room temperature. The gate dielectric is an ultrathin polystyrene-co-methyl methacrylate (PS-r-PMMA)-modified hafnium oxide hybrid layer. Grafting the PS-r-PMMA passivates the surface defects. The transistors exhibit balanced performance, including threshold voltage, on/off current ratio, and field effect mobility. Similar channel dimensions for both types of TFT can be designed for the inverter construction. The inverter operates well below 6 V. The switching voltage is approximately Vdd/2 with a high noise margin (87%of theoretical value), which is suitable for flexible logic applications.