Research on Patterning of Polyimide

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• 作者：Jing Huang ; Changlong Cai ; ^{changlongcai@126.com} ; Yujia Zhai ; Huan Liu ; Weiguo Liu
• 关键词：polyimide ; patterning ; etching ; ICP etching ; technique parameters
• 刊名：Physics Procedia
• 出版年：2012
• 期刊代码：P128_18753892
• 类别：ph
• 出版时间：2012
• 卷：32
• 期：Complete
• 页码：779-784
• 文件大小：1038 K

摘要

Polyimide (PI) is a preferred option of the sacrificial layer materials in the fabrication of uncooled infrared detector array. In this paper, the patterning process, under different component and concentration of etching solutions, and surface treatment process of PI in ICP (Inductively Coupled Plasma) are studied. The results show that the better technique parameters are obtained. The preparation parameters: the speed of the spinning coater 9100 RPM, the thermal processing temperature 160虋C, the elevation of temperature and the soaking time 1800s; the lithography parameters: the speed of the spinning coater 2300鈭?400 RPM, the postapply bake temperature 112虋C and time 100s鈭?10 s, the exposure time 8 s, the matching developing solution 1:1&2:1, accordingly developing time 25s&5 s; the surface processing parameters: ICP time 90 s, power 175w, working pressure 2鈭? Pa, the flow of O2 130sccm. So the smooth auxiliary hole and the sidewall with a certain inclination are achieved.