Investigation of Ti-doped Gd₂O₃ charge trapping layer with HfO₂ blocking oxide for memory application

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• 作者：Chyuan Haur Kao ; ^{chkao@mail.cgu.edu.tw} ; Chun Chi Chen ; Ching Hua Huang ; Chuan Yu Huang ; Chih Ju Lin ; Jiun Cheng Ou
• 关键词：Ti-doped gadolinium oxide ; Charge trapping layer ; HfO2
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 March, 2012
• 卷：520
• 期：10
• 页码：3857-3861
• 文件大小：1094 K

摘要

In this study, Ti-doped gadolinium oxide (Gd₂TiO₅) is investigated by X-ray diffraction, atomic force microscopy, and capacitance voltage curves (C-V) as the charge trapping layer in metal-oxide-high-k material-oxide-silicon structure memories. It was found that the Gd₂TiO₅ charge-trapping layer with an HfO₂ blocking layer annealed at 900 掳C had a larger window of 4.8 V in the C-V hysteresis loop, a faster program/erase speed and good retention without significant drift up to 10⁴ cycles. This excellent performance was attributed to the well-crystallized Gd₂TiO₅ structure and the higher probability of charges being trapped in the deep trap energy level of the Gd₂TiO_5. This Gd₂TiO₅ memory device with post-annealing shows considerable promise for use in future flash memory applications.