Laser beam induced current measurements of Cd_{1鈭?span style='font-style: italic'>x}Zn_xS/CdTe solar cells

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• 作者：W.S.M. Brooks ; ^{will.brooks@optictechnium.com} ; ^{chp605@bangor.ac.uk} ; S.J.C. Irvine ; V. Barrioz ; A.J. Clayton
• 关键词：CdZnS ; CdTe ; Open-circuit voltage ; Photoresponse ; Laser
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2012
• 期刊代码：81_09270248
• 类别：ce
• 出版时间：June, 2012
• 卷：101
• 期：Complete
• 页码：26-31
• 文件大小：801 K

摘要

The role of the window layer in Cd_1鈭?em>xZn_xS/CdTe photovoltaic (PV) device structures was investigated using a triple wavelength laser beam induced current (LBIC) technique. Full pn structures were deposited using metal organic chemical vapour deposition (MOCVD). The triple wavelength LBIC technique allowed for the diagnostic analysis of carrier collection uniformity at 3 wavelength dependent photon penetration depths, 未_p. An assessment of the Cd_1鈭?em>xZn_xS window layer film thickness and surface coverage showed a correlation between lateral device performance and window layer thickness distribution. Islands of thick Cd_1鈭?em>xZn_xS were shown to increase localised blue absorption, correlating to isolated regions of increased red and IR photoresponse. Overall device open-circuit voltage, V_oc is shown to demonstrate a linear dependence on thick (鈭?00 nm) Cd_1鈭?em>xZn_xS surface coverage. V_oc and shunt resistance R_sh losses attributed to the window layer were found to jointly contribute to the overall cell efficiency losses. A non-uniform pin-hole distribution, leading to R_sh loss, was found to be independent of the overall Cd_1鈭?em>xZn_xS thickness distribution; thus the triple wavelength LBIC measurement was able to identify causes for the observed losses in both V_oc and R_sh.