LDMOS-transistors on semi-insulating silicon-on-polycrystalline-silicon carbide substrates for improved RF and thermal properties
- 作者：S. Lotfi ; sara.lotfi@angstrom.uu.se ; L.-G. Li ; Ö ; . Vallin ; L. Vestling ; H. Norströ ; m ; J. Olsson
- 关键词：SOI ; Si-on-poly-SiC ; SiC ; Wafer bonding ; LDMOS ; RF
- 刊名：Solid-State Electronics
- 出版年：2012
- 期刊代码：73_00381101
- 类别：ph
- 出版时间：April, 2012
- 卷：70
- 期：Complete
- 页码：14-19
- 文件大小：1562 K
摘要
SOI enables reduced capacitive coupling in RF power technology but the thick oxide causes thermal problems. In this paper, the authors present a new type of substrate, where the oxide insulator and the silicon substrate in SOI, are replaced by silicon carbide (SiC). SiC has higher thermal conductivity and is semi-insulating which can improve the thermal and RF performance. Here, LDMOS-transistors are processed and characterized on 150 mm silicon-on-polycrystalline-silicon carbide (Si-on-poly-SiC) substrates as well as on high power and RF optimized SOI reference substrates. The electrical performance for the Si-on-poly-SiC was improved or equal compared to the SOI reference and the device self-heating was reduced. The hybrid substrate had lower RF losses and the RF measurements on transistors were not ideal due to no isolation between the devices.