In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures

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• 作者：Alexandre Fiori^a ; ^{alexandre.fiori@grenoble.cnrs.fr} ; Thu Nhi Tran Thi^a ; Gauthier Chicot^a ; Franç ; ois Jomard^b ; Franck Omnè ; s^a ; Etienne Gheeraert^a ; Etienne Bustarret^a
• 关键词：Diamond ; Delta-doping ; Dry etch ; SIMS
• 刊名：Diamond and Related Materials
• 出版年：2012
• 期刊代码：30_09259635
• 类别：ms
• 出版时间：April, 2012
• 卷：24
• 期：Complete
• 页码：175-178
• 文件大小：504 K

摘要

One of the main challenges of delta-doping of diamond with boron resides in minimizing the width and optimizing the structural quality of the interface region between the heavily-doped ultra-thin layer and the non intentionally doped high mobility epilayers. In this work, we present an in situ etching-back approach to this problem. In particular, a careful SIMS profiling of the top interface shows that advanced gas switching procedures and adequate in situ O₂ and H₂ plasma etch steps lead to a rising depth lower than 2 nm per decade over 3 to 4 orders of magnitude of boron concentration. A specificity of the present work is that the multilayer structures were obtained without interrupting the microwave plasma during the whole process.