Comparative analysis of oxide phase formation and its effects on electrical properties of SiO₂/InSb metal-oxide-semiconductor structures

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• 作者：Jaeyel Lee^a ; Sehun Park^a ; ^b ; Jungsub Kim^a ; Changjae Yang^a ; Sujin Kim^a ; Chulkyun Seok^a ; Jinsub Park^e ; Euijoon Yoon^a ; ^b ; ^c ; ^d ; ^{eyoon@snu.ac.kr}
• 关键词：InSb ; SiO2 ; PECVD ; Interface ; XPS
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 June, 2012
• 卷：520
• 期：16
• 页码：5382-5385
• 文件大小：694 K

摘要

We report on the changes in the interfacial phases between SiO₂ and InSb caused by various deposition temperatures and heat treatments. X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were used to evaluate the relative amount of each phase present at the interface. The effect of interfacial phases on the electrical properties of SiO₂/InSb metal-oxide-semiconductor (MOS) structures was investigated by capacitance-voltage (C-V) measurements. The amount of both In and Sb oxides increased with the deposition temperature. The amount of interfacial In oxide was larger for all samples, regardless of the deposition and annealing temperatures and times. In particular, the annealed samples contained less than half the amount of Sb oxide compared with the as-deposited samples, indicating a strong interfacial reaction between Sb oxide and the InSb substrate during annealing. The interface trap density sharply increased for deposition temperatures above 240 掳C. The C-V measurements and Raman spectroscopy indicated that elemental Sb accumulation due to the interfacial reaction of Sb oxide with InSb substrate was responsible for the increased interfacial trap densities in these SiO₂/InSb MOS structures.