Controlled electrochemical deposition of magnetostrictive Fe_{1 鈭?#xa0;x}Ga_x alloys

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• 作者：K. Sai Madhukar Reddy^a ; Eliot C. Estrine^b ; Dong-Ha Lim^a ; ¹ ; William H. Smyrl^a ; Bethanie J.H. Stadler^a ; ^b ; ^{stadler@umn.edu}
• 关键词：Giant magnetostrictive alloy ; Rotating disk electrode ; Deposition mechanism ; Galfenol ; Iron ; Gallium
• 刊名：Electrochemistry Communications
• 出版年：2012
• 期刊代码：29_13882481
• 类别：ch
• 出版时间：2012
• 卷：18
• 期：Complete
• 页码：127-130
• 文件大小：465 K

摘要

In this study, using steady-state electrochemistry at a rotating disk electrode, a deposition mechanism for giant magnetostrictive Fe_{1 鈭?#xA0;x}Ga_x alloys is proposed in which the formation of an adsorbed monovalent [Fe(I)]_ads intermediate is determined to be the rate-determining step. In subsequent steps, this intermediate either gets reduced to iron or catalyzes the reduction of gallium by forming an adsorbed [Ga(III)-Fe(I)]_ads intermediate. In line with the proposed mechanism, it was experimentally shown that the differences in the mass-transport rates of Fe(II) species determined the thin film composition. Therefore, this study has made possible a controllable and reproducible deposition of Fe_{1 鈭?#xA0;x}Ga_x thin films with compositions in the entire range of interest (15%-30%Ga). As-grown Fe₈₀Ga₂₀ thin films were found to have magnetostriction constants of ~ 112 ppm.