Monolithic 3D-ICs with single grain Si thin film transistors

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• 作者：R. Ishihara ; ^{r.ishihara@tudelft.nl} ; J. Derakhshandeh ; M.R. Tajari Mofrad ; T. Chen ; N. Golshani ; C.I.M. Beenakker
• 关键词：Silicon ; Thin-film transistor ; 3D-ICs ; Excimer-laser ; Crystallization ; Photo-diode ; SRAM ; Memory ; Image sensor
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：May, 2012
• 卷：71
• 期：Complete
• 页码：80-87
• 文件大小：1282 K

摘要

Monolithic 3D integration is the ultimate approach in 3D-ICs as it provides high-density and submicron vertical interconnects and hence transistor level integration. Here, high-quality Si layer formation at a low temperature is a key challenge. We review our recent achievements in monolithic 3D-ICs based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. With the 渭-Czochralski process based on a pulsed-laser crystallization, Si grains with a diameter of 6 渭m are successfully formed on predetermined positions. Single-grain (SG) Si TFTs are fabricated inside the single-grain with mobility for electron and holes of 600 cm²/V s and 200 cm²/V s, respectively. Two layers of the SG Si TFT were vertically stacked and successfully implemented into CMOS inverter, 3D 6T-SRAM and single-grain lateral PIN photo-diode with in-pixel amplifier. Those results indicate that the SG TFTs are attractive for use in monolithic 3D-ICs on an arbitrary substrate including a glass and even a plastic for applications such as ultra-high-density memories, logic-to-logic integration, CPU integrated display, and high-definition image sensor for artificial retina.