Effects of 200 keV argon ions irradiation on microstructural properties of titanium nitride films

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• 作者：M. Popović ; M. Novaković ; M. Š ; iljegović ; N. Bibić ; ; ^{natasabi@vinca.rs}
• 关键词：Titanium nitride ; Ion irradiation ; TEM ; RBS ; XRD
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2012
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：15 May, 2012
• 卷：279
• 期：Complete
• 页码：144-146
• 文件大小：605 K

摘要

This paper reports on a study of microstructrual changes in TiN/Si bilayers due to 200 keV Ar⁺ ions irradiation at room temperature. The 240 nm TiN/Si bilayers were prepared by d.c. reactive sputtering on crystalline Si (1 0 0) substrates. The TiN films were deposited at the substrate temperature of 150 掳C. After deposition the TiN/Si bilayers were irradiated to the fluences of 5 脳 10¹⁵ and 2 脳 10¹⁶ ions/cm². The structural changes induced by ion irradiation in the TiN/Si bilayers were analyzed by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction analyses (XRD) and Transmission Electron Microscopy (TEM). The irradiations caused the microstructrual changes in TiN layers, but no amorphization even at the highest argon fluence of 2 脳 10¹⁶ ions/cm². It is also observed that the mean crystallite size decreases with the increasing ion fluence.