Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO

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• 作者：Shengjun Zhou^a ; Bin Cao^b ; Sheng Liu^b ; ^{victor_liu63@126.com} ; Han Ding^a ; ^b
• 关键词：LEDs ; Patterned sapphire substrate ; Patterned ITO
• 刊名：Optics and Laser Technology
• 出版年：2012
• 期刊代码：48_00303992
• 类别：ph
• 出版时间：October, 2012
• 卷：44
• 期：7
• 页码：2302-2305
• 文件大小：1002 K

摘要

To improve the light extraction efficiency of GaN-based light-emitting diodes (LEDs), periodic semisphere patterns with 3.5 渭m width, 1.2 渭m height, and 0.8 渭m spacing were formed on sapphire substrate by dry etching using BCl₃/Cl₂ gas chemistry. The indium tin oxide (ITO) transparent conductive layer was patterned by wet etching to reduce the total internal reflection existing along between p-GaN, ITO, and air. At 350 mA injection current, the high power LED by integrating patterned sapphire substrate with patterned ITO technology exhibited a 36.9%higher light output power than the conventional LEDs.