Effects of oxygen concentration on the electrical properties of ZnO films

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• 作者：Hong Seung Kim ; Eun Soo Jung ; Won-Jae Lee ; Jin Hyeok Kim ; Sang-Ouk Ryu ; Sung-Yool Choi
• 关键词：A. Films ; C. Electrical property ; D. ZnO ; Oxygen content
• 刊名：Ceramics International
• 出版年：2008
• 期刊代码：13_02728842
• 类别：ms
• 出版时间：May 2008
• 卷：34
• 期：4
• 页码：1097-1101
• 文件大小：736 K

摘要

In this paper, electrical characteristics by various oxygen content in ZnO films were studied. To control the oxygen content of ZnO films, post-thermal annealing was performed in N₂ and air ambient, led to improve crystallinity and optical properties of ZnO films. The oxygen concentration was measured by Auger electron spectroscopy. The ZnO films having the deficiency of oxygen showed the electron concentrations between 10²¹ and mid 6 × 10¹⁷ cm⁻³ and resistivity at 10⁻³–10⁻¹ Ω cm. On the other hand, when the oxygen concentration of the ZnO films was up to the stoichiometry with Zn, the ZnO films showed low electron concentration at −10¹⁷ cm⁻³ and resistivity at 10 Ω cm.