Influence of niobium doping on the electrical properties of 0.58Pb(Sc_1/2Nb_1/2)O₃–0.42PbTiO₃ single crystal

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• 作者：S.V. Rajasekaran ; R. Jayavel
• 关键词：A. Ferroelectrics ; B. Crystal growth ; D. Piezoelectricity ; D. Dielectric response
• 刊名：Solid State Communications
• 出版年：2007
• 期刊代码：101_00381098
• 类别：ms
• 出版时间：September 2007
• 卷：143
• 期：10
• 页码：466-470
• 文件大小：778 K

摘要

Piezoelectric single crystals of 0.58Pb(Sc_1/2Nb_1/2)–0.42PbTiO₃ and Nb⁵⁺-doped PSN–PT have been grown using flux technique. It is believed that the addition of Nb⁵⁺ creates lead vacancy ref="/science?_ob=MathURL&_method=retrieve&_udi=B6TVW-4P429CG-2&_mathId=mml9&_user=10&_cdi=5545&_rdoc=7&_acct=C000050221&_version=1&_userid=10&md5=137807ae8d64bae4eb6a0a41c0619764">rc="http://www.sciencedirect.com/cache/MiamiImageURL/B6TVW-4P429CG-2-1R/0?wchp=dGLbVtb-zSkzV" alt="Click to view the MathML source" align="absbottom" border="0" height=13 width=31> in order to compensate charge neutrality. The structural distortion that occured in the doped crystals has been revealed through broadening of some peaks in X-ray diffraction studies. Niobium content that increased from 0.50 to 1.00 mol%might have induced more defect dipoles associated with ref="/science?_ob=MathURL&_method=retrieve&_udi=B6TVW-4P429CG-2&_mathId=mml10&_user=10&_cdi=5545&_rdoc=7&_acct=C000050221&_version=1&_userid=10&md5=679090b549cc62981e88490e0d9733d3">rc="http://www.sciencedirect.com/cache/MiamiImageURL/B6TVW-4P429CG-2-2V/0?wchp=dGLbVtb-zSkzV" alt="Click to view the MathML source" align="absbottom" border="0" height=13 width=19>. This plays a significant role in improving the ferroelectric, dielectric and piezoelectric properties. Our observations clearly show an increase in the spontaneous polarization ration:none; color:black" href="/science?_ob=MathURL&_method=retrieve&_udi=B6TVW-4P429CG-2&_mathId=mml11&_user=10&_cdi=5545&_rdoc=7&_acct=C000050221&_version=1&_userid=10&md5=9456e17d311f5c76c5a84edad6906ee2" title="Click to view the MathML source">(P_r), dielectric constant at room temperature, degree of diffuseness and transition temperature ration:none; color:black" href="/science?_ob=MathURL&_method=retrieve&_udi=B6TVW-4P429CG-2&_mathId=mml12&_user=10&_cdi=5545&_rdoc=7&_acct=C000050221&_version=1&_userid=10&md5=ead586cd8758bb0c153294e550235527" title="Click to view the MathML source">(T_c) and also a decrease in coercive field. The reasons behind these enhanced electrical properties are discussed in detail.