Design and fabrication of low power polysilicon sources
摘要
Large area polysilicon infrared (IR) sources have been designed and fabricated using micromachining technology for space flight project. Boron implant dose was varied to obtain different resistances of the polysilicon sources. It is found that there exists a resistance value for which power requirement for light emission is minimum. A linear relationship between input and output power is observed for the emission temperature range of 600 to 900 K. Theoretical expressions of I–V characteristics are derived by taking into account the effect of change in resistance due to self-heating of the polysilicon resistor. Good agreement between theoretical and experimental I–V characteristics is observed within the limit of experimental errors.