Energy band alignment of MgO (111)/ZnO (0002) heterojunction determined by X-ray photoelectron spectroscopy

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• 作者：K. Shi ; ^{shikai@semi.ac.cn} ; P.F. Zhang ^{zhangpanf@semi.ac.cn} ; H.Y. Wei ; C.M. Jiao ; C.M. Li ; X.L. Liu ^{xlliu@semi.ac.cn} ; S.Y. Yang ; Q.S. Zhu ; Z.G. Wang
• 关键词：A. MgO ; A. ZnO ; D. Polarization effect ; E. Photoelectron spectroscopy
• 刊名：Solid State Communications
• 出版年：2012
• 期刊代码：101_00381098
• 类别：ms
• 出版时间：June, 2012
• 卷：152
• 期：11
• 页码：938-940
• 文件大小：270 K

摘要

X-ray photoelectron spectroscopy (XPS) was used to measure the energy discontinuity in the MgO (111)/ZnO (0002) heterostructure. The valence band offset (VBO) was determined to be 1.22卤0.23 eV and a type-I heterojunction with a conduction band offset (CBO) of 3.24卤0.23 eV was obtained. The discrepancy of VBO values between MgO/ZnO and ZnO/MgO heterojunctions was mainly attributed to the internal electric field induced by spontaneous polarization effect in ZnO layer.