A normal incidence X-ray standing wave study of sulphur adsorption on InP(110)

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• 作者：McGrath ; R. ; Johal ; T.K. ; Finetti ; P. ; Dhanak ; V.R. ; Robinson ; A.W. ; Patchett ; A. ; Zahn ; D.R.T.
• 刊名：Applied Surface Science
• 出版年：1996
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：September, 1996
• 卷：104-105
• 期：Complete
• 页码：257-261
• 文件大小：421 K

摘要

A normal incidence X-ray standing wave (NIXSW) study of room temperature in-situ S adsorption on InP(110) is described. The S atom XSW profile was measured by detecting S 1s photoemission yield for the (220) Bragg reflection. The average perpendicular distance of the S atoms from the InP(110) surface was determined to be 1.95±0.02 Å. The coherent fraction ter border=0 SRC=/images/glyphs/BHE.GIF>_c was found to be 0.67±0.02, which upon annealing to 270°C increased to 0.82±0.02. A (1 × 1) low energy diffraction (LEED) pattern was observed in all cases. Models for the adsorption geometry are discussed.