Fullerene based n-type organic thin-film transistors

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• 作者：Joshua N. Haddock ; Xiaohong Zhang ; Benoit Domercq and Bernard Kippelen
• 刊名：Organic Electronics
• 出版年：2005
• 期刊代码：137_15661199
• 类别：et
• 出版时间：2005
• 卷：6
• 期：4
• 页码：182-187
• 文件大小：516 K

摘要

Significant progress has been made in the area of p-type organic field effect transistors while progress in developing n-type materials and devices has been comparatively lacking, a limiting factor in the pursuit to develop complementary organic electronic circuits. Given the need for n-type organic semiconductors we have carried out studies using two different fullerene molecules, C₆₀ and C₇₀. Here, we report mobilities for C₆₀ ranging from 0.02 cm²/V s up to 0.65 cm²/V s (depending on channel length), and mobilities from 0.003 cm²/V s up to 0.066 cm²/V s for C₇₀. All devices were fabricated with organic films deposited under high vacuum but tested at ambient pressures under nitrogen.