Study of a-Si:H/a-Si:H/渭c-Si:H PIN Type Triple Junction Solar Cells in a Single Chamber System
- 作者：X.X. Zheng ; X.D. Zhang ; xdzhang@nankai.edu.cn ; S.S. Yang ; S.Z. Xu ; C.C. Wei ; J. Sun ; X.H. Geng ; Y. Zhao
- 关键词：Silicon thin film solar cells ; tunnel junction ; Triple junction ; Single chamber ; Microcrystalline silicon
- 刊名：Physics Procedia
- 出版年：2012
- 期刊代码：P128_18753892
- 类别：ph
- 出版时间：2012
- 卷：32
- 期：Complete
- 页码：308-313
- 文件大小：804 K
摘要
Low cost triple junction solar cells, which are very important for the development of industry, have been studied in this paper. Based on the amorphous silicon/amorphous silicon tandem solar cells realized in industry using completely single chamber deposition technique, amorphous silicon /amorphous silicon/microcrystalline silicon (a-Si:H/a-Si:H/渭c-Si:H) triple junction solar cells with 9.13%initial conversion efficiency have been fabricated by changing deposition condition for n/p tunnel junction treatments which include H plasma treatment, variation of 渭c-Si:H n layer deposition conditions, and variation of p layer thickness in a single chamber developed by us. It has proved that amorphous silicon thin film solar cell now in industry can be progressed by introducing single chamber microcrystalline silicon thin film solar cells technique.