Broadband and omnidirectional anti-reflection layer for III/V multi-junction solar cells

详细信息	查看全文 | 推荐本文 |

• 作者：Silke L. Diedenhofen^a ; ¹ ; ^{diedenhofen@amolf.nl} ; Grzegorz Grzela^a ; Erik Haverkamp^b ; Gerard Bauhuis^b ; John Schermer^b ; Jaime Gó ; mez Rivas^a ; ^c ; ^{rivas@amolf.nl}
• 关键词：III/V solar cells ; Anti-reflection ; Semiconductor nanowires
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2012
• 期刊代码：81_09270248
• 类别：ce
• 出版时间：June, 2012
• 卷：101
• 期：Complete
• 页码：308-314
• 文件大小：472 K

摘要

We report a novel graded refractive index antireflection coating for III/V quadruple solar cells based on bottom-up grown tapered GaP nanowires. We have calculated the photocurrent density of an InGaP-GaAs-InGaAsP-InGaAs solar cell with a MgF₂/ZnS double layer antireflection coating and with a graded refractive index coating. The photocurrent density can be increased by 5.9%when the solar cell is coated with a graded refractive index layer with a thickness of . We propose to realize such a graded refractive index layer by growing tapered GaP nanowires on III/V solar cells. For a first demonstration of the feasibility of the growth of tapered nanowires on III/V solar cells, we have grown tapered GaP nanowires on AlInP/GaAs substrates. We show experimentally that the reflection from the nanowire coated substrate is reduced and that the transmission into the substrate is increased for a broad spectral and angular range.