GaN schottky barrier MOSFET using transparent source/drain electrodes for UV-optoelectronic integration

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• 作者：Byung-Kwon Jung^a ; Chang-Ju Lee^a ; Tae-Hyeon Kim^b ; Dong-Seok Kim^a ; Myoung-Bok Lee^c ; Jung-Hee Lee^a ; Sung-Ho Hahm^a ; ^{shhahm@knu.ac.kr}
• 关键词：SB-MOSFET ; ITO ; IZO ; GaN on silicon
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：July, 2012
• 卷：73
• 期：Complete
• 页码：78-80
• 文件大小：539 K

摘要

We fabricated a normally-off mode n-channel schottky barrier metal oxide semiconductor field effect transistor (SB-MOSFET) with transparent electrodes (ITO, IZO) as source/drain (S/D) contact on a highly resistive GaN layer grown on silicon substrate. Fabricated SB-MOSFET with ITO S/D exhibited as high as 40 mA/mm of maximum drain current and a 12 mS/mm of maximum transconductance with the threshold voltage of 4.2 V, which is far better than that of SB-MOSFET with IZO S/D. The normalized off-current was as low as 10 nA/mm. The UV-visible extinction ratio of a MOSFET type UV-sensor was measured over 130 for V_DS = 5 V. ITO was proved as a promising schottky barrier material for GaN MOSFET source and drain not only for the electronic but UV-sensing applications better than IZO for this purpose.