Electrical and Structural Characterization of Germanium Nanowires
- 作者：Luana Santos Araujo ; lupisaraujo@gmail.com ; Hanay Kamimura ; Olivia Maria Berengue ; Adenilson JosŽ ; Chiquito
- 关键词：chemical vapor deposition ; nanowires ; germanium ; eletronic transport ; hopping
- 刊名：Physics Procedia
- 出版年：2012
- 期刊代码：P128_18753892
- 类别：ph
- 出版时间：2012
- 卷：28
- 期：Complete
- 页码：62-66
- 文件大小：1224 K
摘要
Germanium nanowires were grown by thermal evaporation of germanium powder associated with the well known vapor-liquid-solid mechanism (VLS). The nanowires were investigated by x-ray diffraction (XRD), Raman spectroscopy and field emission gun scanning electron microscopy (FEG-SEM). Through the fabrication of a germanium nanowires-based device we have studied the electronic transport properties of these samples. The transport measurements revealed semiconductor - like features, characterized by the decrease of the resistance as the temperature decreases. The variable range hopping (VRH) was identified as the main transport mechanism in a large temperature range (77 K < T < 400 K) thus giving consistent support to the mechanisms underlying the observed semiconducting character.