Numerical calculation with empirical interatomic potential for formation mechanism of CuAu-I type ordered structure in InGaAs/(110)InP
- 作者：Kangawa ; Y. ; Kuwano ; N. ; Oki ; K. ; Ito ; T.
- 关键词：Empirical interatomic potential calculation ; CuAu-I type ordered structure ; Ordering mechanism ; Migration potential ; Semiconductor alloy ; 68.55 (Epitaxy) ; 68.35.R (Phase transitions at surface and interfaces) ; 73.61.J (Semiconductor thin films) ; 07.05.T (
- 刊名：Applied Surface Science
- 出版年：2000
- 期刊代码：6_01694332
- 类别：ms
- 出版时间：June, 2000
- 卷：159-160
- 期：Complete
- 页码：368-373
- 文件大小：804 K
摘要
In an InGaAs/(110)InP, a CuAu-I type ordered structure is formed during growth with a propagation of two-monolayer steps (2-MLSs). The numerical calculation with an empirical interatomic potential has suggested that the ordered InGaAs clusters are stabilized at kink edges of the 2-MLSs. We confirmed that In and Ga adatoms preferentially occupy the upper and lower sites at a kink of 2-MLS, respectively. This explains that the CuAu-I type ordered structure which is made of alternately stacked In- and Ga-rich (110) planes is formed by propagation of the 2-MLS with kinks. Our Monte Carlo simulation using the ordering model showed that the ordered structure is actually formed at the growth temperature (
yphs/BQ1.GIF>700 K).
yphs/BQ1.GIF>700 K).