Gd-doping of HfO₂

详细信息	查看全文 | 推荐本文 |

• 作者：Ihor Ketsman ; Ya.B. Losovyj ; A. Sokolov ; Jinke Tang ; Zhenjun Wang ; M.L. Natta ; J.I. Br ; P.A. Dowben
• 关键词：Oxide dielectric layers ; Hafnium oxide ; Gd doping ; Resonant photoemission
• 刊名：Applied Surface Science
• 出版年：2008
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：15 May 2008
• 卷：254
• 期：14
• 页码：4308-4312
• 文件大小：327 K

摘要

An increase in the density of states between the oxygen 2p bands and the Fermi level is seen with increasing Gd concentrations. In addition, for the Gd-doped HfO₂ films, the Gd 4f photoexcitation peak at 5.5 eV below the valence band maximum was identified using resonant photoemission. Electrical measurements show pronounced rectification properties for lightly-doped Gd:HfO₂ films on p-Si and for heavily-doped Gd:HfO₂ films on n-Si, suggesting a crossover from n-type to p-type behavior with increasing doping level. In addition, there is an increase in the reverse bias current with neutron irradiation.