Thermal annealing effect on the electrical properties and structural defects density of non-stoichiometric a-GaAs films

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• 作者：F.A. Abdel-Wahab and M.F. Kotkata
• 关键词：GaAs ; Electrical properties ; Tetrahedral semiconductors ; Amorphous semiconductors
• 刊名：Physica B
• 出版年：2005
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：2005
• 卷：368
• 期：1-4
• 页码：209-214
• 文件大小：208 K

摘要

Amorphous gallium arsenide (a-GaAs) films were prepared from their constituents using the co-evaporation technique. The temperature dependence of DC conductivity for the as-deposited (fresh) As-rich and that of thermally annealed films over the temperature range 373–553 K is measured. Results of the characteristic electrical parameters indicate non-monotonic behavior during the thermal annealing range 373–423 K and a monotonic one in the range 423–553 K. Results of the density of structural defect states, using the space-charge-limited current model, are given and discussed in relation to the nature and distribution of defect states regarding their dependence on the thermal treatment.