Silicon carbide mosfet technology

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• 作者：Brown ; D.M. ; Downey ; E. ; Ghezzo ; M. ; Kretchmer ; J. ; Krishnamurthy ; V. ; Hennessy ; W. ; Michon ; G.
• 刊名：Solid-State Electronics
• 出版年：1996
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：November, 1996
• 卷：39
• 期：11
• 页码：1531-1542
• 文件大小：1011 K

摘要

The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the world's first SiC analog IC--a monolithic MOSFET operational amplifier. Research tasks required for the development of a planar SiC MOSFET IC technology included: characterization of the SiC-SiO₂ interface using thermally grown oxides; high temperature (350°C) reliability studies of thermally grown oxides; ion implantation studies of donor (N) and acceptor (B) dopants to form junction diodes; epitaxial layer characterization; device isolation methods; and finally integrated circuit design, fabrication and testing of the world's first monolithic SiC operational amplifier IC. High temperature circuit drift instabilities at 350°C were characterized. These studies defined an SiC depletion model MOSFET IC technology and outlined tasks required to improve all types of SiC devices.