Switching characteristics of silicon carbide power PiN diodes
摘要
Recent progress in Silicon Carbide (SiC) material has made it feasible to build power devices with reasonable current density. This paper will present recent results including a comparison with state of the art silicon diodes. The effect of diode reverse recovery on the turn-on losses of a fast Si IGBT are studied both at room temperature and at 150°C. At room temperature, SiC diodes allow a reduction of IGBT turn on losses by as much as 6× and at 150°C junction temperature SiC diodes allow a turn-on loss reduction of between 16× and 3× when compared to fast and ultra fast silicon diodes respectively. Total losses due to reverse diode recovery were reduced by as much as 10× at 25°C and between 5× and 18× at 150°C. The yield and I–V characteristics of these diodes are also described.