Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes
- 作者：Cao ; X.A. ; LeBoeuf ; S.F. ; Kim ; K.H. ; Sandvik ; P.M. ; Stokes ; E.B. ; Ebong ; A. ; Walker ; D. ; Kretchmer ; J. ; et. al.
- 关键词：Light-emitting diode ; GaN ; Radiative tunneling ; Nonradiative recombination
- 刊名：Solid-State Electronics
- 出版年：2002
- 期刊代码：73_00381101
- 类别：ph
- 出版时间：December, 2002
- 卷：46
- 期：1
- 页码：2291-2294
- 文件大小：238 K
摘要
The mechanisms of carrier injection and recombination in a GaN/InGaN single quantum well light-emitting diodes have been studied. Strong defect-assisted tunneling behavior has been observed in both forward and reverse current–voltage characteristics. In addition to band-edge emission at 400 nm, the electroluminescence has also been attributed to radiative tunneling from band-to-deep level states and band-to-band tail states. The approximately current-squared dependence of light intensity at 400 nm even at high currents indicates dominant nonradiative recombination through deep-lying states within the space-charge region. Inhomogeneous avalanche breakdown luminescence, which is primarily caused by deep-level recombination, suggests a nonuniform spatial distribution of reverse leakage in these diodes.